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2SC4807
Silicon NPN Epitaxial
REJ03G0731-0300 (Previous ADE-208-1122A) Rev.3.00 Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
* High gain bandwidth product fT = 4.4 GHz Typ * High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
4
Note:
Marking is "ER". *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm) Ratings 20 15 2 200 800 150 -55 to +150 Unit V V V mA mW C C
Rev.3.00 Aug 10, 2005 page 1 of 7
2SC4807
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 20 -- -- -- 50 -- 3.0 5.0 -- Typ 30 -- -- -- 120 2.8 4.4 7.0 2.5 Max -- 1 1 10 250 4.0 -- -- 4.0 Unit V A mA A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 2 V, IC = 0 VCE = 5 V, IC = 100 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA, f = 900 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
2SC4807
Main Characteristics
Maximum Collector Dissipation Curve
DC Current Transfer Ratio hFE
1600 200 VCE = 5V 160
Collector Power Dissipation Pc (mW) (on the alumina ceramic board)
DC Current Transfer Ratio vs. Collector Current
1200
120
800
80
400
40
0
50
100
150
200
0 1 2 5 10 20 50 100 200 500
Ambient Temperature Ta (C)
Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage
5.2 IE = 0 4.4 f = 1 MHz
6 VCE = 5 V 5 4 3 2 1 0 10
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product vs. Collector Current
fT (GHz) Gain Bandwidth Product
3.6
2.8
2.0
20
50
100
200
500
1.2 0.5
1
2
5
10
20
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Power Gain vs. Collector Current
10
f = 900 MHz 10 VCE = 5V
Noise Figure vs. Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
f = 900 MHz 8 VCE = 5V
8
6
6
4
4
2
2
0
2 5 10 20 50 100 200
0 2 5 10 20 50 100 200
Collector Current IC (mA)
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 7
2SC4807
Output Power vs. Input Power
32
Output Power Pout (dBm)
f = 900 MHz VCE = 5V 24 I C = 100 mA
16
8
0
8
16
24
32
Input Power Pin (dBm)
Rev.3.00 Aug 10, 2005 page 4 of 7
2SC4807
S11 Parameter vs. Frequency .8 1 1.5 2 3 4 5 10 0
.2 .4 .6 .8 1.0 1.5 2 3 4 5 10
S21 Parameter vs. Frequency 90 120 Scale: 4 / div. 60
.6 .4 .2
150 30 180 0
-10 -.2 -.4 -.6 -1.5 -2 -5 -4 -3 -30
-150 -120
-.8 -1 Condition: VCE = 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA)
-60 -90 Condition: VCE = 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA)
S12 Parameter vs. Frequency 90 120 Scale: 0.1 / div. 60
S22 Parameter vs. Frequency .6 .4 .2
.2 .4 .6 .8 1.0 1.5 2
.8
1
1.5 2 3 4 5 10
3 4 5 10
150
30
180
0
0
-10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1.5
-150 -60
-30
-90 Condition: VCE = 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA)
-120
-1 Condition: VCE = 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA)
Rev.3.00 Aug 10, 2005 page 5 of 7
2SC4807
S Parameter
(VCE = 5 V, IC = 20 mA, ZO = 50 , Emitter Common)
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.525 0.533 0.542 0.544 0.547 0.552 0.555 0.558 0.570 0.569 ANG. -150.0 -171.9 177.6 170.2 163.8 158.2 152.6 147.5 142.4 137.4 MAG. 14.03 7.16 4.75 3.60 2.91 2.46 2.14 1.90 1.72 1.58 S21 ANG. 104.7 90.9 83.2 77.5 72.1 67.4 63.3 59.3 55.2 51.9 MAG. 0.039 0.063 0.089 0.116 0.143 0.170 0.197 0.225 0.254 0.280 S12 ANG. 58.4 65.7 69.6 71.0 71.5 71.3 70.5 69.6 68.4 67.2 MAG. 0.336 0.197 0.157 0.146 0.145 0.150 0.158 0.166 0.175 0.186 S22 ANG. -75.5 -89.9 -98.3 -104.0 -109.0 -113.7 -117.1 -121.0 -124.6 -128.1
S Parameter
(VCE = 5 V, IC = 100 mA, ZO = 50 , Emitter Common)
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.488 0.502 0.507 0.507 0.514 0.513 0.518 0.524 0.525 0.531 ANG. -172.8 176.3 170.0 163.6 159.0 153.6 148.5 144.0 139.3 134.2 MAG. 16.32 8.08 5.34 4.03 3.27 2.75 2.40 2.13 1.93 1.77 S21 ANG. 97.8 88.0 82.0 77.2 72.8 68.8 65.1 61.3 57.8 54.6 MAG. 0.034 0.066 0.099 0.132 0.163 0.195 0.225 0.254 0.284 0.312 S12 ANG. 76.2 78.6 77.8 76.4 74.5 72.7 70.7 68.5 66.3 64.6 MAG. 0.248 0.195 0.184 0.181 0.184 0.189 0.192 0.196 0.200 0.205 S22 ANG. -116.9 -141.9 -152.2 -157.9 -161.8 -164.0 -165.8 -167.6 -169.4 -170.8
Rev.3.00 Aug 10, 2005 page 6 of 7
2SC4807
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SC4807ERTR-E Quantity 1000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Aug 10, 2005 page 7 of 7
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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